Variability in Resistive Memories

Resistive memories are outstanding electron devices that have displayed a large potential in plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and performance been notably improved the last few years to cope with requirements massive industrial production. However, most important hurdle progress their development is so-called cycle-to-cycle variability, which inherently rooted resistive switching mechanism behind operational principle these devices. In order achieve whole picture, variability must be assessed from different viewpoints going experimental characterization adequation modeling simulation techniques. Herein, special emphasis put on part because accurate representation phenomenon critical for circuit designers. this respect, number approaches used date: stochastic, behavioral, mesoscopic..., each them covering particular aspects ion transport mechanisms occurring within material. These subjects dealt review, aim presenting recent advancements treatment memories.